A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process

博士 === 國立交通大學 === 光電工程研究所 === 78 === InSb p-n junction formed by Cd diffusion using a two7 temperature7 zone technique. The junction depth and diffusion profile were determined by analyzing the capacitance7 voltage measurements of the MIS diodes fabricated on the etc...

Full description

Bibliographic Details
Main Authors: DU,SHUN-LI, 杜順利
Other Authors: HUANG,KAI-FENG
Format: Others
Language:zh-TW
Published: 1990
Online Access:http://ndltd.ncl.edu.tw/handle/17512308718490561710

Similar Items