Effects of phosphorus diffusion and MoSi2 polycide structure on the electrical characteristics of gate oxides

碩士 === 國立交通大學 === 光電工程研究所 === 79 ===

Bibliographic Details
Main Authors: LI,ZONG-SHU, 李宗樞
Other Authors: ZHENG,HUANG-ZHONG
Format: Others
Language:zh-TW
Published: 1991
Online Access:http://ndltd.ncl.edu.tw/handle/46032148308988387177