The study and fabrication of HgCdTe MOS device
碩士 === 國立成功大學 === 電機工程研究所 === 81 === For the first time, silicon dioxide layers, prepared by " direct photo-CVD", were passivated onto the HgCdTe substrates using a deuterium lamp as the vacuum-ultra-violet light source. HgCdTe is...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95207858207968549736 |