Analytical Modeling and Simulation of Heterojunction Emitter Bipolar Transistors
碩士 === 國立成功大學 === 電機工程研究所 === 81 === In this thesis, an analytical model for the heterojunction emitter bipolar transistors (HEBTs) is developed. The HEBT, which has a homojunction emitter with a heterojunction confinement layer on top of it, combines the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18081213277357174572 |