TiW Nitride as an Annealing Encapsulant for Si Implanted GaAs
碩士 === 國立交通大學 === 材料科學(工程)研究所 === 81 === RF SPUTTERED TIW NITRIDE AS AN ANNEALING ENCAPSULANT FOR SILICON IMPLANTED GaAs IS FIRSTLY EVALUATED IN THIS WORK. TWO KINDS OF COMMON ANNEALING ENCAPSULANTS, RF SPUTTERED SILICON NITRIDE AND PECVD S...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78525846162828387812 |