| Summary: | 碩士 === 國立交通大學 === 材料科學(工程)研究所 === 81 === RF SPUTTERED TIW NITRIDE AS AN ANNEALING ENCAPSULANT FOR
SILICON IMPLANTED GaAs IS FIRSTLY EVALUATED IN THIS WORK. TWO
KINDS OF COMMON ANNEALING ENCAPSULANTS, RF SPUTTERED SILICON
NITRIDE AND PECVD SILICON NITRIDE, WERE DEPOSITED TO COMPARE
THE DIFFERENCE. TWO KINDS OF IMPLANTATION CONDITION, HIGH DOSE
100KEV,DOSE 2E13 CM^-2 AND LOW DOSE 125KEV 5E12 CM^-2, WERE
USED IN THIS EXPERIMENT. ANNEALING TEMPERATURE RANGES FROM 800
TO 950 DEGREE AND TIME RANGES FROM 2 TO 1200 SECOND BY USING
RAPID THERMAL ANNEALING AND CONVENTIONAL FURNANCE ANNEALING. IN
THE OPTIMAL ANNEALING CONDITION, THE CARRIER CONCENTRAION OF
TIW NITRIDE CAPPED SAMPLES REACH 95% OF PECVDS' AND HAVE NEARLY
THE SAME HALL MOBILITY FOR HIGH DOSE IMPLANTED SAMPLES.
AVTIVATION EFFICIENCY OF TIW NITRIDE CAPPED SAMPLES REACH 90%
OF SPUTTERED SILICON NITRIDES'AND 103% OF PECVD SILICON
NITRIDES'. FROM THE SPECTRUM OF PHOTOLUMINESCENCE, 1.462EV GA
VACANCY RELATED CENTER FOR TIW NITRIDE WITH HIGH NITROGEN
CONTENT CAPPED SAMPLES AND 1.462 EV PLUS 1.396 EV AS VACANCY
RELATED CENTER.
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