TiW Nitride as an Annealing Encapsulant for Si Implanted GaAs

• Main Authors: KANG PO ZENG, 康伯堅
• Other Authors: EDWARD, Y. CHANG
• Format: Others
• Language: en_US
• Published: 1993
• Online Access: http://ndltd.ncl.edu.tw/handle/78525846162828387812

碩士 === 國立交通大學 === 材料科學(工程)研究所 === 81 === RF SPUTTERED TIW NITRIDE AS AN ANNEALING ENCAPSULANT FOR SILICON IMPLANTED GaAs IS FIRSTLY EVALUATED IN THIS WORK. TWO KINDS OF COMMON ANNEALING ENCAPSULANTS, RF SPUTTERED SILICON NITRIDE AND PECVD SILICON NITRIDE, WERE DEPOSITED TO COMPARE THE DIFFERENCE. TWO KINDS OF IMPLANTATION CONDITION, HIGH DOSE 100KEV,DOSE 2E13 CM^-2 AND LOW DOSE 125KEV 5E12 CM^-2, WERE USED IN THIS EXPERIMENT. ANNEALING TEMPERATURE RANGES FROM 800 TO 950 DEGREE AND TIME RANGES FROM 2 TO 1200 SECOND BY USING RAPID THERMAL ANNEALING AND CONVENTIONAL FURNANCE ANNEALING. IN THE OPTIMAL ANNEALING CONDITION, THE CARRIER CONCENTRAION OF TIW NITRIDE CAPPED SAMPLES REACH 95% OF PECVDS' AND HAVE NEARLY THE SAME HALL MOBILITY FOR HIGH DOSE IMPLANTED SAMPLES. AVTIVATION EFFICIENCY OF TIW NITRIDE CAPPED SAMPLES REACH 90% OF SPUTTERED SILICON NITRIDES'AND 103% OF PECVD SILICON NITRIDES'. FROM THE SPECTRUM OF PHOTOLUMINESCENCE, 1.462EV GA VACANCY RELATED CENTER FOR TIW NITRIDE WITH HIGH NITROGEN CONTENT CAPPED SAMPLES AND 1.462 EV PLUS 1.396 EV AS VACANCY RELATED CENTER.