THE STUDY OF NON-ALLOYED OHMIC CONTACTS ON InGaAs/GaAs LAYERS
碩士 === 國立交通大學 === 材料科學(工程)研究所 === 81 === The conventions alloyed contacts for GaAs devices have some disadvantages such as it requires high temperature annealing, and the surface roughness called ball-up usually showed up during the alloyed...
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| Format: | Others |
| Language: | en_US |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17991590174328013397 |