Thermal Oxidation of Lightly and Heavily Doped Silicon in N2O and Its Device Applications

• Main Authors: Hong-Yi Chang, 張鴻儀
• Other Authors: S.C. Sun ; K.M. Chang
• Format: Others
• Language: en_US
• Published: 1983
• Online Access: http://ndltd.ncl.edu.tw/handle/70901250965490234092

碩士 === 國立交通大學 === 電子研究所 === 81 === High quality ultrathin oxide is requireed for deep submicron MOS devices. Recently, a new technique to grow thin thin gate dielectrics by oxidizing silicon substrates in pure N2O has been gaining wide attentions. However, there is an uncertainly whether the growth of Si in N2O ambient is self-limiting.In this study,we present extensive results of thermal oxidation of lightly and heavily doped silicon in N2O, and demonstrate that the thermal oxidation of silicon in pure N2O is not self- llmiting.The interesting phenomena of silicon enhanced oxidation on heavily doped substrates and oxide thickness crossover of (110) and (111) in the initial stage of oxidation have also been observed in N2O oxidation. The devices application utilizing N2O oxidation was used to study the electrical characteristics of MOSFET's with TEOS deposited gate oxides. Results show that devices of TEOS oxide with N2O anneal have smaller drain current degradation under CHC stress condition. The transconductance degradation is slightly worse as compared to thermal gate oxide devices.