Study on device structures of polycrystalline silicon TFT's
碩士 === 國立交通大學 === 電子研究所 === 81 === The characteristics of polycrystalline silicon thin-film transistor (poly-Si TFT's) with a field-induction-drain (FID) structure using an electrically induced layer as a drain are investigated. The ne...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04222434825023468715 |