A Study on the Transient Simulation of the Semiconductor Devices
碩士 === 國立交通大學 === 電子研究所 === 81 === A complete device simulation program based on the finite difference method is developed and the numerical calculations of potentials and currents in one- and two-dimensional pn junction under steady-state...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/98021089398064223699 |