Computer simulation of short-buried-channel n-MOSFET's
碩士 === 國立交通大學 === 電子研究所 === 81 === In this thesis, the basic device physics of a buried chan- nel n-MOSFET are described, which include the threshold-volta- ge model and I-V characteristics. Based on these models, the extraction methods f...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56861137772290558150 |