The Structure Analysis of the Selectively Grown Si Epilayers

碩士 === 國立交通大學 === 電子研究所 === 81 === Low-temperature selective epitaxial growth (SEG ) of silicon sing dichlorosilane - hydrogen mixture in an LPCVD hot-wall reactor has been discussed with respect to the wafer preparation, the deposition tem...

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Bibliographic Details
Main Authors: Chung-Cheng Tsai, 蔡忠政
Other Authors: Jen-Chung Lou
Format: Others
Language:en_US
Published: 1993
Online Access:http://ndltd.ncl.edu.tw/handle/62442816874409037892