A Study on Hydrogenated Amorphous Silicon Thin-Film Transistor
碩士 === 國立交通大學 === 電子研究所 === 81 === Thin film transistors with high performce at low deposition temperature in the range of 250℃∼350℃ were successfully fabricated. Our silicon nitride film was deposited by decomposing silane and ammonia mixture. Due to the introduction of hydrogen gas, the silicon...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67354200432431969748 |