Optimized Epitaxial Growth of GaAs:Si Infrared Emitting Diodes
碩士 === 中原大學 === 應用物理學系 === 82 === The epitaxial wafers of GaAs:Si infrared emitting diodes were grown by the horizentol multi-bin slide-boat liquid phase epitaxial system. The major objects in this experiments were to find the optimum condi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49795437269116827231 |