Study on the Correlation between Deposition Parameters and Optoelectronic Properies in Intrinsic Hydrogenated Amorphous Silicon
碩士 === 大葉大學 === 電機工程研究所 === 82 === In this study,intrinsic hydrogenated amorphous silicon(a-Si:H) sample at different combination of deposition parameters, such as substrate temperature , RF powerdensity, flow rate and deposition pressure ,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84046403473194366864 |