Boron Penetration Induced Performance Degradation in P+ Polysilicon Gated P-MOSFET and Its Improvement Technologies
博士 === 國立成功大學 === 電機工程研究所 === 82 === In recent, an implanted P+ polysilicon gated P-MOSFET becomes more popular in deep submicrometer technology. Conventionally, the higher diffusivity of boron ion degrades device performances easily. In our thesis,due...
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| Format: | Others |
| Language: | zh-TW |
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1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97388202791307258326 |