A study of Indium-Tin-Oxide/SiC contact sysytem
碩士 === 國立成功大學 === 電機工程研究所 === 82 === Because SiC material possesses wide energy gap, large saturated drift velocity, large breakdown field, better physical and chemical stability. Thus, the application of silicon carbide material is attract...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/06142094208553825492 |