The Study and Fabrication of Boron δ doped Si MESFET
碩士 === 國立成功大學 === 電機工程研究所 === 82 === In this thesis, many different structures of P channel delta -doped metal semiconductor field-effect transistors (δ-MESFET) are grown by Si molecular-beam epitaxy (MBE). Compared to homogerous dope...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/36028535135781185111 |