| Summary: | 碩士 === 國立成功大學 === 電機工程研究所 === 82 === In this thesis, many different structures of P channel delta
-doped metal semiconductor field-effect transistors (δ-MESFET)
are grown by Si molecular-beam epitaxy (MBE). Compared to
homogerous doped device the delta-doped devices have many
advantages including high carrier concertration, high
breakdown voltage and high carrier mobility. In the result,
this doping concept is generally studied and applied. In this
paper, film characterization are presented and analyzed by
useing Secondary Ion Mass Specometry (SIMS) and Hall
measurements. And we have discussed the current-voltage
charateristics between the singleδ-FET and coupled δ-FET.
Moremove, we still discuss the different parameters of couple
δ-doped channel FET including the spacer thinkness and the
doping concerntration. Finally, we have succeed in proving
that when the spacer thinkness of the couple δ-FET is 200, the
device can reach the best characteristi It exhibits an
extrinsic transcondonctance of 2.9 ms/mm, and the highest
current density is 16 mA/mm. This is very matched to the
simulation result.
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