The Study of Thermal Effect and Frequency Characteristics on Heterojunction power bipolar transistors
碩士 === 國立成功大學 === 電機工程研究所 === 82 === The Heterojunction wide-gap emitter provides a large barrier to emitter reverse current and so allows the base region to be heavily doped, and therefore lower in resistance than for a homojunction transi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83617473076943658915 |