A Study of Doped-channel Field-effect Transistor
碩士 === 國立成功大學 === 電機工程研究所 === 82 === In this thesis,the doped-channel field effect transistor with a lightly doped GaAs cap layer on top of InGaAs channel is studied .The InGaAs compound is employed for its higher electron mobility than GaA...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26743387539789506686 |