The Study of the Metal/n-GaN Ohmic Contacts and the RIE Etching of GaN Materials
碩士 === 國立交通大學 === 材料科學(工程)研究所 === 82 === The etch behavior of GaN grown by LP-MOCVD and by reactive sputtering was investigated for CH4/H2, CF4, CF4/O2, BCl3 and BCl3/SF6 discharges, with more attention given to BCl3/SF6 discharges which wa...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87683498000814545031 |