Characterization of anodized Al2O3 and its application to a-Si: H TFTs with Al2O3/SiNx double-layered gate dielectric
碩士 === 國立交通大學 === 材料科學(工程)研究所 === 82 === Al2O3/SiNx dielectric film suitable for large size a-Si:H TFT L CD have been prepared by anodization and PECVD. Al2O3 layers we re formed at various pH values and H2O% in the electrolyte, and treated...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85809711693657538848 |