Formation of the Shallow Junctions by the Implantation-Through- Polysilicon Technique

• Main Authors: Chi-Hung Chao, 趙基宏
• Other Authors: Huang-Chung Cheng
• Format: Others
• Language: en_US
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/36444851330329203064

碩士 === 國立交通大學 === 電子研究所 === 82 === As the device geometries are continuously scaling down,the abrication and control of shallow junctions become increas- ingly difficult. Implantation through polysilicon (ITP) is onethe effective approaches to fabricate shallow junctions. Theysilicon serves as the buffer layer to reduce the ion energ- mplanted into substrate, confines most of the implantations in it,and provides silicon atoms to react with theayer during the silicidation process. In this thesis, shallow junctions with nonsilicided andobalt silicided contacts formed by ITP method have been systemtically investigated. For the nonsilicided p+/n samples, highantation energies introduces severe damages in the Sirate and thus causes very leaky junction characteristics.ast, cobalt silicided samples provide the enhancementannihilation during the silicidation. For theanted n+/p samples,the compromise between theand the electrical characteristics results inindow.For the cobalt silicided n+/p samples,ano- ration into substrate along the implant-inducedsilicidation was observed.