Formation of PtSi Contacted Shallow Junctions by Rapid Themal Processing Technique
碩士 === 國立交通大學 === 電子研究所 === 82 === This thesis studies the formation of PtSi contacted p﹢n shallow junctions by ITS(implant-through-silicide)／ITM( implant- through-metal) BF2﹢ implantation and rapid thermal annealing ( RTA)technique. The e...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28140458847449898832 |