Flow-Rate Modulation Heteroepitaxy of GaAs on Si by MOCVD
碩士 === 國立中山大學 === 電機工程研究所 === 82 === In this work, we study the flow-rate modulation epitaxy (FM E) effects on the crystal quality of GaAs/Si structures grown by metalorganic chemical vapor deposition (MOCVD). The electrical and optical...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/08610529773963201864 |