Design and Implementation on Driving and Protective ircuits of IGBTs
碩士 === 義守大學 === 電機工程研究所 === 83 === The Insulated Gate Bipolar Transistor (IGBT) combines Power MOSFET and Power BJT technology to provide the circuit designer with a device that has Power MOSFET input characteristics and BJT output characteristics. So it has the characteristics of low drive po...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1995
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/44811720442887832084 |