Preparation and Characteristic of AlN Thin Film by RF Magnetron Sputtering

• Main Authors: Po-Fu Yen, 顏伯甫
• Other Authors: Nan-Chung Wu
• Format: Others
• Language: zh-TW
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/89860094719100628610

碩士 === 國立成功大學 === 材料科學(工程)研究所 === 83 === The RF magnetron sputtering technique was employed in this study to obtain AlN thin films on silicon and glass substrat- es. The reaction atmosphere was a mixture of argon and nitr- ogen and the selected sputtering targets were either aluminum or AlN . By changing the RF power, the chamber pressure ,and the N2/Ar ratio , the aluminum nitride thin film that with C- axis preferred orientation was observed. This is believed to substantially benefit the futural application of this materi- al in packaging industry. The crystallography of the costed films was analyzed by x- ray diffraction (XRD) and by operating the scanning electron microscope (SEM) for film surface property and sample cross- section morphology , and by practicing the alfa-step analysis for film thickness. Besides , the composition and its depth of profile of AlN in the as- sputtered film were also investi- gated using electron probe microscope analysis (EPMA) and se- condary ion mass spectrum (SIMS) techniques.The I-V and C-V curves of the as-sputtered film are measured to clarify the electric properties. The experimental results indicated that the optimum sputte- ring conditions were chamber pressure at 3 mTorr, N2/Ar ratio at 0.15 (for AlN target) and 0.5 (for Al target), RF power at more than 400W and the substrate temperature at room temperat- ure. The AlN film was found to be with excellent surface fl- atness (Ra=20nm) , Al/N atomic ratio closed to 1 , and in the C-axis preferred orientation. The SEM observation showed the morphology of columnar grains existed in the AlN film. The deposition rate of the AlN film, when the RF power was set at 400W, was 28-32 nm/min using the Al target and 38-42 nm/min u- sing the AlN target. The electric resistivity and the specif- ic dielectric constant of the AlN thin film are 1E10-1E11 ohm- cm and 10 from I-V and C-V curves , respectively .