The Influences of Thermal and Surface Processes on Schottky Barrier Height
碩士 === 國立成功大學 === 電機工程研究所 === 83 === The effects of thermal process and surface passivation on Schottky barrier height of several kinds of metal-n/GaAs were investigated.Using MBE, n-GaAs buffer layer was grown between N- type GaAs substrate and metal to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70507627737928785291 |