Simulation and Design of Insulated Gate Bipolar Transistor
碩士 === 國立成功大學 === 電機工程研究所 === 83 === Insulated Gate Bipolar Transistor, as the new-generation power switch device, has the characteristics of low saturation voltage, low on-resistance and low switch loss. Particularly, IGBT contain an extre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60344232620745150902 |