The Techniques of the Serial and Paralleled IGBTs
碩士 === 國立成功大學 === 電機工程研究所 === 83 === The IGBT is a new developed device in recent years, and is a hybrid power device that combines the advantages of a POWER MOSFET and a BJT. Because of the advantages of IGBTs, they have wide applic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21184688675277798892 |