Photoelectric Transitions and Chacterizations of GaSb Compound Quantum Well, Superlattices and Infrared Photodetectors
博士 === 國立成功大學 === 電機工程研究所 === 83 === Undoped GaSb epilayers grown by a variety of techniques are always p-type. The formation reason of p-type s studied in order to improve the quality of GaSb epilayer. For undoped p- type GaSbhighest mobility and the low...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77004153498742736385 |