Growth of Si-B Layer by Ultra-high Vacuum Chemical Vapor Deposition for ULSI Applications
博士 === 國立交通大學 === 電子研究所 === 83 === This dissertation presents a new material,Si-B layer,as a diffusion source for doping p+ poly-Si. The Si-B layer was grown in an UHV/CVD systems. The results indicated that Si-B layer can be regarded as an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55381359781741419509 |