Reliability analysis of ECR oxide for the inter-metal dielectric with sub-half micron gap-filling
碩士 === 國立交通大學 === 電子研究所 === 83 === Electron cyclotron resonance plasma oxide (ECR oxide) for the inter-metal dielectric (IMD) application has been well characterized for sub-half-micron technology. The void-free gap- filling capability of t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77550756104250051416 |