Study of polycrystalline silicon thin film transistors
碩士 === 國立交通大學 === 應用化學系 === 83 === The solid pases recrystallization of amorphous silicon ( α-Si ) films deposited by a low-pressure chemical vapor deposition system using disilane (Si2H6) gas at various annealing conditions are investigate...
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| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57694513232941617495 |
| Summary: | 碩士 === 國立交通大學 === 應用化學系 === 83 === The solid pases recrystallization of amorphous silicon ( α-Si
) films deposited by a low-pressure chemical vapor deposition
system using disilane (Si2H6) gas at various annealing
conditions are investigated. The grain sizes of recrystallized
films formed from Si2H6 are larger than that formed from SiH4.
The maximum grain size is obtained at the deposition
temperature of 475℃, where the nucleation rate is minimum due
to the maximum structural disorder of the Si network. The
structural disorder increases not only by lowering the
substrate temperature but also by increasing the deposition
rate. A significant improvements concerning electrical
characteristics are achieved due to the great grain size. A new
method which combinates low-temperature furnace annealing and
high-temperature rapid thermal annealing leads to obtained
high- quality poly-Si films and to reduce the long annealing
time for solid phase crystallization(SPC) of amorphous silicon
films. The low temperature oxide films deposited at 200℃ by
photochemical- assisted vapor deposition process can be used to
combinate the recrystallized poly-Si films to achieve the low
temperature fabrication of Poly-Si TFTs.We also obtaine
excellent electrical characteristics, even though the maximum
temperature during the TFT fabrication process is only 600 ℃.
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