Molecular Beam Epitaxial Growth and Characterization Of Gallium Antimonide
碩士 === 國立中山大學 === 電機工程研究所 === 83 === The molecular beam epitaxy (MBE) growth characteristics of gallium antimonide by using solid Ga(7N) and Sb(6N) as sources in this paper were studied mainly through the growth rate and composition variations of the laye...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01572957947030289830 |