Film Formation Mechanisms of SiC Using a SiH2Cl2/C2H2 /H2 - Chemical Vapor Deposition Reaction System
碩士 === 國立臺灣科技大學 === 化學工程研究所 === 83 === A study of the film formation mechanism of b-SiC by a chemical vapor deposition reaction system using SiH2Cl2 and C2H2 as reactant gases in H2 is presented. A hot wall tubular reactor, together with a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84335391199971920603 |