The Study of Hard Films by Cathodic Arc Plasma Deposition Method

• Main Authors: Luh-Feng Jiang, 江祿峰
• Other Authors: Chin Hsin Liu
• Format: Others
• Language: zh-TW
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/67007795681131096079

碩士 === 國立臺灣科技大學 === 化學工程研究所 === 83 === In tihis thesis, we explored the application of cathodic arc plasma technique in the deposition of (i)diamond-like film, (ii) hard films such as TiN, TiC and TiCN. Diamond-like film was deposited using high density graphite (1.92 g/cm3) as target and nitrogen as arc-sustaining gas. Film structure was influenced by parameters like arc current, background gas pressure and substrate bias voltage. Optimum condition was achieved as 35-40 ampere arc current, 0.01 torr background pressure, and -300 to -500 volt bias voltage. TiN, TiC and TiCN Films were deposited using Ti metal as target, and the mixture of N2 with CH4 or C2H2 as sustaining gas. From X- ray diffraction data, we found that TiN was preferentially grown in（111）direction, while TiC was in（220 ） direction, and higher crystallinity was achieved using CH4 as compared to C2H2. In conclusion, applicability of cathodic arc plasma technique in depositing both diamond- like film and Ti-based hard films was demonstrated, film structure and property were correlated to deposition parameters.