以液相磊晶生長InP/InGaAs/InP及InGaAs/InGaAs/InP異質PIN光檢測器結構之研究
碩士 === 中正理工學院 === 電子工程研究所 === 84 === In0.53Ga0.47As epitaxial layers were growth on (100) InP substrate by Liquid-Phase Epitaxy with nearly lattice matched condition. Doping effects on both the electrical and optical properties of Pr2O3-doped In0.53Ga0.47As layer have been carefully examined. We...
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| Format: | Others |
| Language: | zh-TW |
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1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06609858154126556636 |