Design and Analysis of Modulation-Doped FET Using Computer Experiment Method
碩士 === 中原大學 === 電子工程學系 === 84 === In this study, a two-dimensional device simulatior is employed to analyze the transient and the steady-state characteristics of the Modulation-Doped FET's (MODFET's).The distribution of the carrie...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
1996
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Online Access: | http://ndltd.ncl.edu.tw/handle/55842445614094746691 |