Design and Analysis of Modulation-Doped FET Using Computer Experiment Method

碩士 === 中原大學 === 電子工程學系 === 84 === In this study, a two-dimensional device simulatior is employed to analyze the transient and the steady-state characteristics of the Modulation-Doped FET's (MODFET's).The distribution of the carrie...

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Bibliographic Details
Main Authors: Ueng ,Wu-Der, 翁武得
Other Authors: Wen, Wu-Yih
Format: Others
Language:zh-TW
Published: 1996
Online Access:http://ndltd.ncl.edu.tw/handle/55842445614094746691

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