Study of the Boron Penetration Effect by Using Inductive- Coupming Nitrogen Plasma in the Amorphous/Polysilicon Gate Structures
碩士 === 逢甲大學 === 電機工程研究所 === 84 === In this thesis, a novel study of BF2+ - implanted gate pMOS devices by using the Inductive-Coupling-Nitrogen-Plasma (ICNP)treatment within the stacked Amorphous / Polysilicon (SAP) gate structure...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66539723346559998968 |