Study of the Boron Penetration Effect by Using Inductive- Coupming Nitrogen Plasma in the Amorphous/Polysilicon Gate Structures

• Main Authors: Lin, Chiou Jyi, 林秋吉
• Other Authors: Yang Wen-Luh
• Format: Others
• Language: zh-TW
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/66539723346559998968

碩士 === 逢甲大學 === 電機工程研究所 === 84 === In this thesis, a novel study of BF2+ - implanted gate pMOS devices by using the Inductive-Coupling-Nitrogen-Plasma (ICNP)treatment within the stacked Amorphous / Polysilicon (SAP) gate structures is investigatedon the suppression of boron penetration effect for the submicron CMOS applications.From the experimental measurements of flatband voltage shifts and charge to breakdown values and the breakdown field and high-frequency capacitance-voltage curves,results show about the effect of the boron diffusion through the thin gate oxide can be significantly suppressed by using this novel method.The suppression of penetration effects with the combination of the ICNP treatment and the SAP gate structures are believed to due to boron impurities are caught by introducing the nitrogen atoms from the ICNP treatment effect and the dopant segregation at the amorphous / polysilicon interface and longer path for dopant diffussion to the gate / oxide interface from the SAP gate structures effect.By using the ICNP/ SAP gate structures instead of the polysilicon gate structures on must be concerned that the α-Si thickness needs to over 30nm for preventing the damage from the nitrogen plasma. Under stacking the amorphous-Si thickness of 30nm, we can suppress the boron penetration effect more effectively for the application of next devices.