The effects of plasma nitriding and TiAl interlayer on the TiAlN films
碩士 === 國立成功大學 === 材料科學(工程)學系 === 84 === TiAlN films were deposited on high speed steel (H.S. S.) by reactivemagnetron sputtering. The effects of plasma nitriding of substrate and TiAlinterlayers on the TiAlN films were investi...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36648159648937491107 |
| Summary: | 碩士 === 國立成功大學 === 材料科學(工程)學系 === 84 === TiAlN films were deposited on high speed steel (H.S.
S.) by reactivemagnetron sputtering. The effects of plasma
nitriding of substrate and TiAlinterlayers on the TiAlN films
were investigated. The hardness
and wear resistance of nitrided substrate were
substantiallyimprove with increasing N2/(N2+H2) ratio in
nitriding atmosphere. The criticalloads of TiAlN films on
nitrided H.S.S. were higher than that on untreatedH.S.S. in
scratch test. Results also indicated that the films were
lessadherent to H.S.S. substrates as the N2/(N2+H2) ratio
increased in nitridingatmosphere.
XRD analysis showed that both TiAl and TiAlN films have
strong (111)preferred orientation. A semicoherent interface
was expexted since both the(111) d-spacings were very close. GDS
analysis indicated that the nitrogenatoms in TiAlN film
would diffuse into TiAl interlayer in depositing process.
Optimized critical load and wear resistance of TiAlN/H.S.S.
were obtained asan 1 um TiAl interlayer was introduced.
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