Investigation of InGaAs/GaAs Metal-Insulator-Semiconductor (MIS) Like Heterostructure High-Speed Devices
碩士 === 國立成功大學 === 電機工程研究所 === 84 === In this thesis, we will discuss two kinds of InGaAs-GaAs heterostructure graded doped-channel MIS-like FET. The main advantage of graded doped-channel MIS-like FET''s is li- kely doped-channel MIS-like FET�...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62054248820133553317 |