Study of Asymmetric Trapezoidal Gate Structure of Metal-Oxide- Semiconductor Device
碩士 === 國立成功大學 === 電機工程研究所 === 84 === The theoretical models of the conventional MOSFET with rectangular gate have been well done. In order to reduce the Miller effect which is caused by the gate to drain junction and overlap capacitance, th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59283525761097699405 |