Investigation of Functional Heterostructure-Emitter Bipolar Transistor (HEBT)
碩士 === 國立成功大學 === 電機工程研究所 === 84 === In this thesis, we propose and demonstrate the functional heterostructure-emitter bipolar transistor (HEBT) based on the InGaP/GaAs material systen. Apart from the experimental works, a theoretical simulation to examine the emitter injection efficiency and the va...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55747911837554383155 |