The Investigation of End-of-Range Defect Reduction in Shallow Junctions Using Plasma Nitridation and Carbon Implantation
碩士 === 國立交通大學 === 材料科學與工程研究所 === 84 === The end-of-range (EOR) defects were obserced in germanium implantated Si single crystal wafer after thermal annealing. Most of the EOR defects were found to be dislocation loops of interstitial ty...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36325652545423249225 |