The Electrical Investigation of LPD Oxides on Single Crystal Silicon and Poly-silicon
碩士 === 國立交通大學 === 電子研究所 === 84 === For the growth of silicon dioxide using the traditional thermal furnacetube, the interface damges caused by high temperature process such as ther-mal stress and dislocation growth will degrade the perfor...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72721520630846621308 |